DocumentCode :
1110876
Title :
IVA-6 New high current drivability MIS-like FET´s utilizing a highly doped thin GaAs channel
Author :
Hida, Hirotaka ; Okamoto, Atsushi ; Toyoshima, Hisashi ; Tahara, S. ; Ohata, Katsuki
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1852
Lastpage :
1852
Keywords :
1f noise; Electrons; FETs; Gallium arsenide; MESFETs; Microwave technology; Noise level; Noise reduction; Temperature distribution; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22795
Filename :
1486012
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1110876
