Title :
High performance 660 nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode
Author :
Sun, D. ; Treat, D.W. ; Bour, D.P.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
fDate :
8/1/1996 12:00:00 AM
Abstract :
A high performance 660 nm metal cladding ridge waveguide laser diode was fabricated from a compressively strained In0.6Ga 0.4P/(AlxGa1-x)0.5In0.5 P single quantum well laser structure. The 4 μm wide ridge waveguide diode had a threshold current of 31 mA with a differential quantum efficiency of 45%/facet (slope efficiency of 0.85 W/A) under CW operation. The characteristic temperature was 120 K from 20 to 75°C. The diode operated in a single transverse mode up to 22 mW/facet
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; quantum well lasers; ridge waveguides; waveguide lasers; 20 to 75 C; 22 mW; 31 mA; 45 percent; 660 nm; CW operation; InGaP-AlGaInP; characteristic temperature; compressively strained single quantum well; differential quantum efficiency; metal cladding ridge waveguide laser diode; single transverse mode; slope efficiency; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961003
