Title :
Visible laser diodes grown by metal organic vapour phase epitaxy (MOVPE)
Author :
Roberts, Jeffrey S. ; Hamilton, C.J. ; McIlvaney, K. ; Marsh, John H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ.
fDate :
8/1/1996 12:00:00 AM
Abstract :
Visible (682 nm) InAlGaAs oxide stripe lasers have been fabricated on atmospheric pressure MOVPE grown material. Lowering the oxygen residue of the metal organic reagents allows uniform deposition of high optical quality InAlGaAs QWs at ~600°C. A separate confinement heterostructure laser using a single QW lased at room temperature with J ∞ of 1.23 kAcm2
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; quantum well lasers; vapour phase epitaxial growth; 600 to 620 C; 682 nm; InAlGaAs; InAlGaAs oxide stripe lasers; SCL laser; atmospheric pressure MOVPE grown material; high optical quality QWs; metal organic vapour phase epitaxy; separate confinement heterostructure laser; uniform deposition; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960982
