• DocumentCode
    1110956
  • Title

    The fractional quantum hall effect

  • Author

    Tsui, D.C. ; Störmer, H.L.

  • Author_Institution
    Department of Electrical Engineering, Princeton Univ., Princeton, NJ, USA
  • Volume
    22
  • Issue
    9
  • fYear
    1986
  • fDate
    9/1/1986 12:00:00 AM
  • Firstpage
    1711
  • Lastpage
    1719
  • Abstract
    A review is given of the fractional quantum Hall effect with the emphasis placed on the basic experimental facts. Only a superficial description is made of the current theoretical understanding.
  • Keywords
    Bibliographies; Gallium materials/devices; Hall effect; Electrons; Gallium arsenide; Hall effect; Helium; Heterojunctions; Land surface temperature; Magnetic fields; Physics; Potential well; Stationary state;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1986.1073172
  • Filename
    1073172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110956