Title :
High brightness low voltage mesa style ZnSe light emitting diodes
Author :
Rennie, J. ; Onomura, Masaaki ; Nishikawa, Yoshihiro ; Saito, Sakuyoshi ; Nitta, Katsumi ; Ishikawa, Masatoshi ; Hatakoshi, G.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki
fDate :
6/23/1994 12:00:00 AM
Abstract :
The authors have developed a ZnSe based blue-green (500 m) light emitting diode, employing a mesa type structure, exhibiting low voltage and high brightness operation. This device displayed an output power of 200 μW (3 cd) for a current of 30 mA, under an operating voltage of 8.6 V, and had a record efficiency of 0.26%
Keywords :
II-VI semiconductors; light emitting diodes; zinc compounds; 200 muW; 30 mA; 500 nm; 8.6 V; GaAs; ZnSe; ZnSe light emitting diodes; high brightness; low voltage; mesa structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940717
