Abstract :
A new integrable lateral hybrid emitter short MOS controlled thyristor structure (LHMT) is proposed and its operation is characterised through 2-D device simulation. The simulations indicate that the forward voltage drop of the LHMT is a factor of 3 lower than that of the LIGBT at a current 180 A/cm2, while the turn-off time is practically the same for both. Furthermore, the maximum controllable current of the LHMT is at least twice as large as that of other lateral thyristor structures proposed so far, and around 85% of that of the LIGBT. These features are expected to make the LHMT very attractive for high-voltage and power IC applications
Keywords :
insulated gate field effect transistors; power integrated circuits; semiconductor device models; thyristor applications; thyristors; 2D device simulation; forward voltage drop; high-voltage IC applications; lateral hybrid emitter short MOS controlled thyristor; lateral thyristor structures; maximum controllable current; power IC applications; turn-off time;
