A novel resonant electron transfer triode (RETT), which uses electron resonant tunneling utilizing a metal insulator multilayer superlattice as an artificial semiconductor, is proposed and its basic properties are estimated theoretically. Possibility for high speed response in room temperature, such as response time

ps, cutoff frequency

GHz, maximum oscillation frequency

GHz, and the common-emmitter current gain

are expected theoretically with the transverse area of 1000 × 1000 Å
2and the total base length of 30-100 Å. It is also shown theoretically that this triode has common transistor static characteristics.