DocumentCode :
1111027
Title :
Analysis of novel resonant electron transfer triode device using metal-insulator superlattice for high speed response
Author :
Nakata, Yasuyuki ; Asada, Masahiro ; Suematsu, Yasuharu
Author_Institution :
Tokyo institute of technology, Japan - 1986
Volume :
22
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1880
Lastpage :
1886
Abstract :
A novel resonant electron transfer triode (RETT), which uses electron resonant tunneling utilizing a metal insulator multilayer superlattice as an artificial semiconductor, is proposed and its basic properties are estimated theoretically. Possibility for high speed response in room temperature, such as response time \\tau = 0.25-0.38 ps, cutoff frequency f_{T} = 420-640 GHz, maximum oscillation frequency f_{\\max } = 530-610 GHz, and the common-emmitter current gain \\beta = 8- 34 are expected theoretically with the transverse area of 1000 × 1000 Å2and the total base length of 30-100 Å. It is also shown theoretically that this triode has common transistor static characteristics.
Keywords :
Bipolar transistor amplifiers; Metal-insulator structures; Resonance; Submillimeter-wave amplifiers; Superlattices; Tunnel devices/effects; Cutoff frequency; Electrons; Estimation theory; Insulation; Metal-insulator structures; Metallic superlattices; Nonhomogeneous media; Resonance; Resonant tunneling devices; Semiconductor superlattices;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1986.1073178
Filename :
1073178
Link To Document :
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