Analysis of novel resonant electron transfer triode device using metal-insulator superlattice for high speed response

A novel resonant electron transfer triode (RETT), which uses electron resonant tunneling utilizing a metal insulator multilayer superlattice as an artificial semiconductor, is proposed and its basic properties are estimated theoretically. Possibility for high speed response in room temperature, such as response time ps, cutoff frequency GHz, maximum oscillation frequency GHz, and the common-emmitter current gain are expected theoretically with the transverse area of 1000 × 1000 Ųand the total base length of 30-100 Å. It is also shown theoretically that this triode has common transistor static characteristics.