Author :
Palmier, J.F. ; Minot, C. ; Le Person, H. ; Harmand, J.C. ; Bouadma, N. ; Esnault, J.C. ; Arquey, D. ; Heliot, F. ; Medus, J.P.
Abstract :
GaInAs/AlInAs superlattice oscillators with optical access have been fabricated and tested in the V-band. The devices exhibit the NDC mechanism at frequencies higher than 65 GHz, with low parasitic damping and a gain value of 6 dB at 65 GHz. The measured S-parameters are in fair agreement with a simple numerical simulation
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; indium compounds; millimetre wave oscillators; semiconductor superlattices; 6 dB; 65 GHz; EHF; GaInAs-AlInAs; NDC mechanism; S-parameters; V-band; low parasitic damping; negative differential conductance; optical access; optical control of MM-waves; reflection gain; superlattice oscillators;
