• DocumentCode
    1111038
  • Title

    VA-7 low-threshold, high-T0InGaAsP/InP 1.3-µm lasers grown on p-type InP substrates with a three-melt technique

  • Author

    Hasenberg, T.C. ; Garmire, E.

  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1858
  • Lastpage
    1858
  • Keywords
    Carrier confinement; Cooling; Diode lasers; Electrons; Hot carriers; Indium phosphide; Scattering; Spontaneous emission; Temperature dependence; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22810
  • Filename
    1486027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111038