Title :
Dielectric relaxation as a limit on transistor switching speed
Author :
Ladbrooke, P.H. ; Carroll, J.E.
Author_Institution :
GaAs Code Ltd., Cambridge, UK
fDate :
8/1/1996 12:00:00 AM
Abstract :
Charge re-arrangement in a semiconductor device by the process of dielectric relaxation is re-examined accounting for carrier inertia. Where the length of the control region in contemporary transistors is of the order of 0.1 μm, dielectric relaxation, not transit time, is likely to be the frequency-limiting mechanism
Keywords :
dielectric relaxation; electric charge; semiconductor switches; switching; transistors; carrier inertia; charge re-arrangement; dielectric relaxation; frequency-limiting mechanism; semiconductor device; transistor switching speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960967
