Title :
Volterra series based nonlinear simulation of HBTs using analytically extracted models
Author :
Samelis, Apostolos ; Pehlke, D.R. ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
fDate :
6/23/1994 12:00:00 AM
Abstract :
An accurate HBT large signal model has been developed using an analytical equivalent circuit element extraction technique. Nonlinear characteristics are analysed by means of a Volterra series and agree with experiment. Nonlinear current cancellation effects can be analysed. Their presence also enhances convergence and the applicability of Volterra series to large-signal modelling
Keywords :
S-parameters; bipolar transistors; equivalent circuits; nonlinear network analysis; semiconductor device models; series (mathematics); HBT; S-parameters; Volterra series; analytically extracted models; convergence; equivalent circuit; heterojunction bipolar transistors; large-signal modelling; nonlinear characteristics; nonlinear current cancellation effects; nonlinear simulation; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940694
