DocumentCode
1111080
Title
Volterra series based nonlinear simulation of HBTs using analytically extracted models
Author
Samelis, Apostolos ; Pehlke, D.R. ; Pavlidis, Dimitris
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Volume
30
Issue
13
fYear
1994
fDate
6/23/1994 12:00:00 AM
Firstpage
1098
Lastpage
1100
Abstract
An accurate HBT large signal model has been developed using an analytical equivalent circuit element extraction technique. Nonlinear characteristics are analysed by means of a Volterra series and agree with experiment. Nonlinear current cancellation effects can be analysed. Their presence also enhances convergence and the applicability of Volterra series to large-signal modelling
Keywords
S-parameters; bipolar transistors; equivalent circuits; nonlinear network analysis; semiconductor device models; series (mathematics); HBT; S-parameters; Volterra series; analytically extracted models; convergence; equivalent circuit; heterojunction bipolar transistors; large-signal modelling; nonlinear characteristics; nonlinear current cancellation effects; nonlinear simulation; semiconductor device models;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940694
Filename
294830
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