DocumentCode
1111115
Title
Electronic states in semiconductor heterostructures
Author
Bastard, G. ; Brum, J.A.
Author_Institution
Groupe de Physique des Solides de ĺEcole Normale Supérieure, Paris Cédex, France
Volume
22
Issue
9
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
1625
Lastpage
1644
Abstract
This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Keywords
Bibliographies; Gallium materials/devices; Semiconductor heterojunctions; Superlattices; Dispersion; Energy states; Excitons; Function approximation; Heterojunctions; Lattices; Semiconductor impurities; Semiconductor materials; Semiconductor superlattices; Tensile stress;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1986.1073186
Filename
1073186
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