Title :
VIA-3 high-speed high-sensitivity photoconductive switches fabricated on Ti-doped semi-insulating InP
fDate :
11/1/1986 12:00:00 AM
Keywords :
Delay; Electrons; Impact ionization; Indium phosphide; Iron; Photoconducting materials; Photoconductivity; Superlattices; Switches; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22821
