DocumentCode :
1111168
Title :
VIA-3 high-speed high-sensitivity photoconductive switches fabricated on Ti-doped semi-insulating InP
Author :
Diadiuk, V.
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1862
Lastpage :
1863
Keywords :
Delay; Electrons; Impact ionization; Indium phosphide; Iron; Photoconducting materials; Photoconductivity; Superlattices; Switches; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22821
Filename :
1486038
Link To Document :
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