Title :
VIA-1 very low dark current and high quantum efficient InGaAs/InP p-i-n photodiodes grown by chemical-beam epitaxy
Author :
Tsang, W.T. ; Campbell, Joe C.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Chemicals; Dark current; Epitaxial growth; Heterojunctions; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; PIN photodiodes; Pulse measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22823
