DocumentCode
1111201
Title
VIA-1 very low dark current and high quantum efficient InGaAs/InP p-i-n photodiodes grown by chemical-beam epitaxy
Author
Tsang, W.T. ; Campbell, Joe C.
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1862
Lastpage
1862
Keywords
Chemicals; Dark current; Epitaxial growth; Heterojunctions; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; PIN photodiodes; Pulse measurements;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22823
Filename
1486040
Link To Document