DocumentCode
1111222
Title
VIA-5 planar-type GaAs avalanche photodetector fabricated by focused Ga ion-beam implantation
Author
Hirayama, Yuzo ; Iguchi, H. ; Okamoto, Hiroshi
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1863
Lastpage
1863
Keywords
Absorption; Avalanche breakdown; FETs; Gallium arsenide; Indium gallium arsenide; Optical buffering; P-i-n diodes; Photoconductivity; Photodetectors; Pulse measurements;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22825
Filename
1486042
Link To Document