Title :
VIA-5 planar-type GaAs avalanche photodetector fabricated by focused Ga ion-beam implantation
Author :
Hirayama, Yuzo ; Iguchi, H. ; Okamoto, Hiroshi
fDate :
11/1/1986 12:00:00 AM
Keywords :
Absorption; Avalanche breakdown; FETs; Gallium arsenide; Indium gallium arsenide; Optical buffering; P-i-n diodes; Photoconductivity; Photodetectors; Pulse measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22825
