Title :
VIA-6 planar monolithically integrated InGaAs p-i-n FET using the p-i-n-diode absorption layer as FET buffer layer
Author :
Tegude, F.J. ; Eisele, H. ; Schilling, Meinhard
fDate :
11/1/1986 12:00:00 AM
Keywords :
Absorption; Amorphous materials; Buffer layers; Contact resistance; Crystallization; FETs; Indium gallium arsenide; Monolithic integrated circuits; Ohmic contacts; PIN photodiodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22826
