DocumentCode
1111230
Title
VIA-6 planar monolithically integrated InGaAs p-i-n FET using the p-i-n-diode absorption layer as FET buffer layer
Author
Tegude, F.J. ; Eisele, H. ; Schilling, Meinhard
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1863
Lastpage
1864
Keywords
Absorption; Amorphous materials; Buffer layers; Contact resistance; Crystallization; FETs; Indium gallium arsenide; Monolithic integrated circuits; Ohmic contacts; PIN photodiodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22826
Filename
1486043
Link To Document