Title :
Failure mechanism models for electromigration
Author :
Young, Daniel ; Christou, Aristos
Author_Institution :
Maryland Univ., College Park, MD, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
This tutorial illustrates situations where electromigration (a wearout failure mechanism) in electronic devices can degrade performance. Electromigration and its relation to microstructure is discussed. Temperature considerations are treated. A practical model for electromigration and two application examples of it are given. Qualitative design procedures for avoiding solid-state electromigration failure are briefly discussed
Keywords :
circuit reliability; electromigration; failure analysis; metallisation; modelling; electromigration; electronic devices; failure mechanism models; microstructure; performance degradation; qualitative design procedures; solid-state electromigration failure; temperature considerations; wearout failure mechanism; Atomic measurements; Current density; Degradation; Electromigration; Electrons; Failure analysis; Metallization; Microstructure; Solid state circuits; Temperature;
Journal_Title :
Reliability, IEEE Transactions on
