DocumentCode
1111568
Title
Enhanced CMOS for analog-digital power IC applications
Author
Dolny, Gary M. ; Schade, Otto H., Jr. ; Goldsmith, Barry ; Goodman, Lawrence A.
Author_Institution
RCA Laboratories, David Sarnoff Research Center, Princeton, NJ
Volume
33
Issue
12
fYear
1986
fDate
12/1/1986 12:00:00 AM
Firstpage
1985
Lastpage
1991
Abstract
Elementary process additions to 2-3-µm polygate CMOS provide enhanced high-voltage MOSFET´s and broadband complimentary bipolars. This allows monolithic integration of a modern logic family and quality analog function with high-voltage high-current buffers and drivers. The technology is suitable for data conversion, telecommunication, analog switch, and industrial IC applications where low-voltage digital and analog control circuitry must be interfaced to high-voltage high-current outputs.
Keywords
Analog-digital conversion; CMOS logic circuits; CMOS process; CMOS technology; Data conversion; Driver circuits; Monolithic integrated circuits; Power integrated circuits; Switches; Switching circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22857
Filename
1486074
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