Title :
Lateral HVIC with 1200-V bipolar and field-effect devices
Author :
Chang, Mike F. ; Pifer, George ; Yilmaz, Hamaz ; Wildi, Eric J. ; Hodgins, Robert G. ; Owyang, King ; Adler, Michael S.
Author_Institution :
General Electric Company, Research Triangle Park, NC
fDate :
12/1/1986 12:00:00 AM
Abstract :
The 1200-V blocking capability of lateral high-voltage devices has been achieved through theoretical and experimental investigation. The feasibility of a 1200-V lateral n-p-n bipolar junction transistor, p-n diode, and lateral DMOSFET has been demonstrated for the first time. The on-resistance of the 1200-V DMOSFET is 4 times less than its 1200-V n-p-n BJT counterpart. The major contribution to high BJT on-resistance comes from the series JFET pinch resistance.
Keywords :
Anodes; CMOS technology; Circuit testing; Costs; Diodes; Helium; Impurities; Integrated circuit technology; Isolation technology; P-n junctions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22858
