DocumentCode :
1111590
Title :
350-V analog-digital compatible power IC´s using dielectrically isolated substrates
Author :
Sugawara, Yoshitaka ; Miyata, Kenji ; Okamura, Masahiro
Author_Institution :
Hitachi Ltd., Hitachi, Ibaraki, Japan
Volume :
33
Issue :
12
fYear :
1986
fDate :
12/1/1986 12:00:00 AM
Firstpage :
2002
Lastpage :
2007
Abstract :
Using a dielectric isolation process, 350-V analog-digital compatible power IC technologies were developed. Good complemental electrical characteristics were achieved by vertical n-p-n and new lateral p-n-p transistors, and the transistor noise was reduced by removing crystal defects specific to dielectrically isolated wafers. Furthermore, high accuracy of resistance was achieved by a symmetrical layout. The technologies were applied to the development of a high-voltage power IC for telecommunication uses.
Keywords :
Analog-digital conversion; Dielectric devices; Dielectric substrates; Digital circuits; Electric variables; Impurities; Integrated circuit noise; Isolation technology; Power integrated circuits; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22859
Filename :
1486076
Link To Document :
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