Title :
350-V analog-digital compatible power IC´s using dielectrically isolated substrates
Author :
Sugawara, Yoshitaka ; Miyata, Kenji ; Okamura, Masahiro
Author_Institution :
Hitachi Ltd., Hitachi, Ibaraki, Japan
fDate :
12/1/1986 12:00:00 AM
Abstract :
Using a dielectric isolation process, 350-V analog-digital compatible power IC technologies were developed. Good complemental electrical characteristics were achieved by vertical n-p-n and new lateral p-n-p transistors, and the transistor noise was reduced by removing crystal defects specific to dielectrically isolated wafers. Furthermore, high accuracy of resistance was achieved by a symmetrical layout. The technologies were applied to the development of a high-voltage power IC for telecommunication uses.
Keywords :
Analog-digital conversion; Dielectric devices; Dielectric substrates; Digital circuits; Electric variables; Impurities; Integrated circuit noise; Isolation technology; Power integrated circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22859