DocumentCode
1111758
Title
Cost-effective high-performance monolithic X-band low-noise amplifiers
Author
Wang, David C. ; Pauley, Robert G. ; Wang, Shing-Kuo ; Liu, Louis C T
Author_Institution
Hughes Aircraft Company, Torrance, CA
Volume
33
Issue
12
fYear
1986
fDate
12/1/1986 12:00:00 AM
Firstpage
2084
Lastpage
2089
Abstract
A low-cost, high-performance 
-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured.
-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured.Keywords
Circuit synthesis; Costs; FETs; Gain; Gallium arsenide; Low-noise amplifiers; MMICs; Measurement standards; Noise figure; Radar antennas;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22873
Filename
1486090
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