DocumentCode :
1111907
Title :
Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers
Author :
Evans, Gary A. ; Goldstein, Bernard ; Butler, Jerome K.
Author_Institution :
David Sarnoff Research Center, Princeton, NJ, USA
Volume :
23
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
1900
Lastpage :
1908
Abstract :
Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequence, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.
Keywords :
Epitaxial growth; Gallium materials/lasers; Aluminum; Artificial intelligence; DH-HEMTs; Fourier transforms; Laser theory; Laser transitions; Optical losses; Power lasers; Semiconductor lasers; Substrates;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073260
Filename :
1073260
Link To Document :
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