DocumentCode :
1111943
Title :
Design of quantum-dot lasers with an indirect bandgap short-period Superlattice for reducing the linewidth enhancement factor
Author :
Sun, Gregory ; Khurgin, Jacob B. ; Soref, Richard A.
Author_Institution :
Dept. of Phys., Univ. of Massachusetts, Boston, MA, USA
Volume :
16
Issue :
10
fYear :
2004
Firstpage :
2203
Lastpage :
2205
Abstract :
A novel gain medium consisting of direct bandgap semiconductor quantum dots (QDs) embedded in a short-period superlattice of indirect bandgap as barrier material is proposed to produce QD lasers with extremely small linewidth enhancement factor α. Our analysis has shown that at least one order-of-magnitude reduction in α can be achieved at room temperature compared to that of similar QDs embedded in direct-bandgap barriers, making low chirp, narrow linewidth semiconductor lasers feasible.
Keywords :
chirp modulation; quantum dot lasers; semiconductor superlattices; spectral line breadth; 20 degC; barrier materials; chirp; direct bandgap semiconductor quantum dots; gain medium; indirect bandgap; laser design; linewidth enhancement factor; linewidth semiconductor lasers; quantum dot lasers; room temperature; short-period superlattice; Chirp; Gallium arsenide; Laser theory; Optical design; Photonic band gap; Quantum dot lasers; Radiative recombination; Semiconductor lasers; Semiconductor superlattices; Temperature;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2004.834499
Filename :
1336877
Link To Document :
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