High-power 2.3-μm GaSb-based linear laser array

Author

Shterengas, L. ; Belenky, G.L. ; Gourevitch, A. ; Donetsky, D. ; Kim, J.G. ; Martinelli, R.U. ; Westerfeld, D.

Author_Institution

State Univ. of New York, Stony Brook, NY, USA

Volume

16

Issue

10

fYear

2004

Firstpage

2218

Lastpage

2220

Abstract

High-power 2.3-μm In(Al)GaAsSb-GaSb type-I double quantum-well diode laser arrays were fabricated and characterized. Linear laser arrays with 19 100-μm-wide elements on a 1-cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 μs/300 Hz) at a heatsink temperature of 18/spl deg/C. Array power conversion efficiency peaked at 30 A and was about 9%. Device internal efficiency was about 50%. Individual laser differential gain with respect to current was about twice as high as in InP-based laser heterostructures, demonstrating the potential of GaSb-based material system for high-power CW room-temperature laser diode arrays.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; optical fabrication; optical pumping; quantum well lasers; semiconductor laser arrays; 10 W; 18 degC; 18.5 W; 2.3 mum; 30 A; GaSb-based linear laser array; In(Al)GaAsSb-GaSb; InP-based laser heterostructures; continuous-wave mode; device characterization; device fabrication; double quantum-well diode laser arrays; high-power laser array; laser differential gain; quasicontinuous-wave mode; room-temperature laser diode arrays; Diode lasers; Gas lasers; Laser excitation; Laser modes; Optical arrays; Optical materials; Power lasers; Pump lasers; Semiconductor laser arrays; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.833920

Filename

1336882