DocumentCode :
1112110
Title :
Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb
Author :
Bennett, Brian R. ; Soref, Richard A.
Author_Institution :
Solid State Sciences Directorate, Rome Air Development Center, Hanscom AFB, MA, USA
Volume :
23
Issue :
12
fYear :
1987
fDate :
12/1/1987 12:00:00 AM
Firstpage :
2159
Lastpage :
2166
Abstract :
Effective-mass theory is used to calculate electric-field-induced changes in optical refraction and absorption (the Franz-Keldysh effect) in five direct-gap III-V semiconductors: InP, GaAs, GaSb, InAs, and InSb, covering the 0.88 to 10 μm wavelength range. The magnitude of the effect is determined by fitting experimental absorption data. Results are given for photon energies from the band gap to 100 meV below the gap for applied electric fields from 
to 
V/cm. Values of 
and 
as large as 10-3to 10-2are found. The results are applicable to integrated-optic devices including switches and modulators.
to V/cm. Values of and as large as 10-3to 10-2are found. The results are applicable to integrated-optic devices including switches and modulators.Keywords :
Electrooptic materials/devices; Optical propagation in absorbing media; Optical refraction; Absorption; Erbium; Fiber nonlinear optics; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Nonlinear optics; Optical attenuators; Optical refraction; Photonic band gap;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073276
Filename :
1073276
Link To Document :
