• DocumentCode
    1112110
  • Title

    Electrorefraction and electroabsorption in InP, GaAs, GaSb, InAs, and InSb

  • Author

    Bennett, Brian R. ; Soref, Richard A.

  • Author_Institution
    Solid State Sciences Directorate, Rome Air Development Center, Hanscom AFB, MA, USA
  • Volume
    23
  • Issue
    12
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    2159
  • Lastpage
    2166
  • Abstract
    Effective-mass theory is used to calculate electric-field-induced changes in optical refraction and absorption (the Franz-Keldysh effect) in five direct-gap III-V semiconductors: InP, GaAs, GaSb, InAs, and InSb, covering the 0.88 to 10 μm wavelength range. The magnitude of the effect is determined by fitting experimental absorption data. Results are given for photon energies from the band gap to 100 meV below the gap for applied electric fields from 3 \\times 10^{3} to 3 \\times 10^{5} V/cm. Values of \\Delta n and \\Delta k as large as 10-3to 10-2are found. The results are applicable to integrated-optic devices including switches and modulators.
  • Keywords
    Electrooptic materials/devices; Optical propagation in absorbing media; Optical refraction; Absorption; Erbium; Fiber nonlinear optics; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Nonlinear optics; Optical attenuators; Optical refraction; Photonic band gap;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073276
  • Filename
    1073276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112110