Title :
Laterally coupled buried heterostructure high-Q ring resonators
Author :
Choi, S.J. ; Djordjev, K. ; Zhen Peng ; Qi Yang ; Sang Jun Choi ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
All-buried InP-InGaAsP ring resonators laterally coupled to bus waveguides are demonstrated. The buried configurations offer a lower built-in refractive index step along the resonator periphery, which affords enhanced optical coupling coefficients between the waveguides and reduced scattering losses caused by the resonator sidewall imperfections. Very low optical intensity attenuations of 0.4 cm/sup -1/ and coupling-limited quality factors of greater than 105 are observed from 200-μm-radii ring resonators. The measured spectral linewidth is as narrow as 0.0145 nm.
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; indium compounds; integrated optics; optical couplers; optical losses; optical resonators; optical waveguides; refractive index; spectral line breadth; 200 mum; InP-InGaAsP; buried ring resonators; bus waveguides; high-Q ring resonators; laterally coupled buried heterostructures; optical coupling coefficients; optical intensity attenuations; photonic integrated circuits; quality factors; refractive index; scattering losses; spectral linewidth; Optical attenuators; Optical coupling; Optical losses; Optical refraction; Optical resonators; Optical ring resonators; Optical scattering; Optical variables control; Optical waveguides; Refractive index;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.834518
