Title :
Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD
Author :
Beneking, H. ; Narozny, P. ; Roentgen, P. ; Yoshida, M.
Author_Institution :
Aachen Technical University, Aachen, Federal Republic of Germany
fDate :
2/1/1986 12:00:00 AM
Abstract :
It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices.
Keywords :
Atomic layer deposition; Charge carrier lifetime; Doping; Epitaxial layers; Gallium arsenide; Lattices; MOCVD; Schottky diodes; Semiconductor diodes; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26308
