• DocumentCode
    1112246
  • Title

    Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD

  • Author

    Beneking, H. ; Narozny, P. ; Roentgen, P. ; Yoshida, M.

  • Author_Institution
    Aachen Technical University, Aachen, Federal Republic of Germany
  • Volume
    7
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    101
  • Lastpage
    103
  • Abstract
    It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices.
  • Keywords
    Atomic layer deposition; Charge carrier lifetime; Doping; Epitaxial layers; Gallium arsenide; Lattices; MOCVD; Schottky diodes; Semiconductor diodes; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26308
  • Filename
    1486131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112246