• DocumentCode
    1112269
  • Title

    High-performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis

  • Author

    Hutchby, James A.

  • Author_Institution
    Research Triangle Institute, Research Triangle Park, NC
  • Volume
    7
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    108
  • Lastpage
    111
  • Abstract
    The AlGaAs/GaAs P-n-p heterojunction bipolar transistor (HBT) is shown by a simple analysis to exhibit millimeter wave and digital switching performance comparable to similar N-p-n structures. For example, a P-n-p HBT with a 1-µm emitter stripe and 34-µm2total area yields f_{\\tau } = 31 GHz, f_{\\max } = 94 GHz, and an intrinsic switching speed \\tau _{s} = 8 ps. A similar N-p-n structure exhibits f_{\\tau } = 56 GHz, f_{\\max } = 102 GHz, and \\tau _{s} = 8 ps.
  • Keywords
    Ballistic transport; Bipolar transistors; Contact resistance; Electron beams; Gallium arsenide; Heterojunction bipolar transistors; Logic; Millimeter wave transistors; Molecular beam epitaxial growth; Performance analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26310
  • Filename
    1486133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112269