DocumentCode :
1112269
Title :
High-performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis
Author :
Hutchby, James A.
Author_Institution :
Research Triangle Institute, Research Triangle Park, NC
Volume :
7
Issue :
2
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
108
Lastpage :
111
Abstract :
The AlGaAs/GaAs P-n-p heterojunction bipolar transistor (HBT) is shown by a simple analysis to exhibit millimeter wave and digital switching performance comparable to similar N-p-n structures. For example, a P-n-p HBT with a 1-µm emitter stripe and 34-µm2total area yields 
GHz, 
GHz, and an intrinsic switching speed 
ps. A similar N-p-n structure exhibits 
GHz, 
GHz, and ps.
GHz, GHz, and an intrinsic switching speed ps. A similar N-p-n structure exhibits GHz, GHz, and ps.Keywords :
Ballistic transport; Bipolar transistors; Contact resistance; Electron beams; Gallium arsenide; Heterojunction bipolar transistors; Logic; Millimeter wave transistors; Molecular beam epitaxial growth; Performance analysis;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26310
Filename :
1486133
Link To Document :
