Title :
Trench transistor DRAM cell
Author :
Shichijo, H. ; Banerjee, Sanjay K. ; Malhi, Satwinder D S ; Pollack, G.P. ; Richardson, William F. ; Bordelon, D.M. ; Womack, Richard H. ; Elahy, Mostafa ; Wang, C.P. ; Gallia, James ; Davis, H.E. ; Shah, A.H. ; Chatterjee, P.K.
Author_Institution :
Texas Instruments Inc., Dallas, TX
fDate :
2/1/1986 12:00:00 AM
Abstract :
A new one-transistor DRAM cell with both the transistor and the capacitor fabricated on the trench sidewalls is described. With the signal stored on the polysilicon node surrounded by oxide, the cell is expected to have a high alpha particle immunity. The cell occupies only 9 µm2using 1-µm design rules. This cell size is sufficiently small to enable a 4-Mbit DRAM of reasonable chip size with these design rules, and possesses further scalability for 16-Mbit DRAM´s.
Keywords :
Alpha particles; Capacitors; Corrugated surfaces; Etching; Helium; Interface states; Random access memory; Scalability; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26313
