• DocumentCode
    1112376
  • Title

    Predicting URF Upset of MOSFET Digital IC´s

  • Author

    Tront, Joseph G.

  • Author_Institution
    Department of Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
  • Issue
    2
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    69
  • Abstract
    Typical input and output stages for a digital integrated circuit (IC) have been simulated using the electronic circuit analysis program SPICE2. An unwanted radio-frequency (URF) signal is injected into the circuit at the point where the output stage is connected to an input stage. The effects of varying the magnitude, the frequency, and the relative phase angle of the URF source are studied. An example of a system-level analysis based on the electronics-level simulations is also given.
  • Keywords
    Analytical models; Circuit simulation; Computational modeling; Coupling circuits; Digital circuits; Digital integrated circuits; Electronic circuits; MOSFET circuits; Radio frequency; Very large scale integration; Digital integrated circuit; simulation analysis; susceptibility to ¿upset¿;
  • fLanguage
    English
  • Journal_Title
    Electromagnetic Compatibility, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9375
  • Type

    jour

  • DOI
    10.1109/TEMC.1985.304257
  • Filename
    4091790
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112376