Title :
Predicting URF Upset of MOSFET Digital IC´s
Author :
Tront, Joseph G.
Author_Institution :
Department of Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
fDate :
5/1/1985 12:00:00 AM
Abstract :
Typical input and output stages for a digital integrated circuit (IC) have been simulated using the electronic circuit analysis program SPICE2. An unwanted radio-frequency (URF) signal is injected into the circuit at the point where the output stage is connected to an input stage. The effects of varying the magnitude, the frequency, and the relative phase angle of the URF source are studied. An example of a system-level analysis based on the electronics-level simulations is also given.
Keywords :
Analytical models; Circuit simulation; Computational modeling; Coupling circuits; Digital circuits; Digital integrated circuits; Electronic circuits; MOSFET circuits; Radio frequency; Very large scale integration; Digital integrated circuit; simulation analysis; susceptibility to ¿upset¿;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.1985.304257
