DocumentCode
1112401
Title
SOI TFT´s with directly contacted ITO
Author
Mimura, Akio ; Oohayashi, Masayuki ; Ohue, Michio ; Ohwada, Jun´Ichi ; Hosokawa, Yoshikazu
Author_Institution
Hitachi Ltd., Hitachi, Ibaraki, Japan
Volume
7
Issue
2
fYear
1986
fDate
2/1/1986 12:00:00 AM
Firstpage
134
Lastpage
136
Abstract
N-channel Al-gate thin-film transistors (TFT´s) were fabricated on a silicon on insulator (SOI). Indium tin oxide (ITO) was deposited directly on the n+ silicon layer of the TFT. The contact resistance between the ITO and the n+ silicon layer increases with thermal annealing. The low temperature (200°C) lift-off method of ITO is applied to achieve high-quality TFT´s for active matrices in liquid crystal displays (LCD´s).
Keywords
Annealing; Contact resistance; Driver circuits; Fabrication; Indium tin oxide; Liquid crystal displays; Resists; Silicon on insulator technology; Sputtering; Thin film transistors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26319
Filename
1486142
Link To Document