DocumentCode :
1112410
Title :
Alloying of Al-Cu-Si metallization by rapid thermal annealing
Author :
Alvi, N.S. ; Kwong, D.L.
Author_Institution :
Delco Electronics, General Motors Corporation, Kokomo, IN
Volume :
7
Issue :
2
fYear :
1986
fDate :
2/1/1986 12:00:00 AM
Firstpage :
137
Lastpage :
139
Abstract :
Alloying of Al-Cu-Si metallization by rapid thermal annealing (RTA) has been studied. Low contact resistance (∼ 2 × 10-7Ω.cm2) with good uniformity across a wafer was reproducibly achieved. Al spiking into the Si substrate was contained with good shallow junction integrity and an enhanced suppression of hillock growth on the Al surface was demonstrated.
Keywords :
Alloying; Contact resistance; Electric variables measurement; Electrical resistance measurement; Electromigration; Metallization; Rapid thermal annealing; Substrates; Surface resistance; Temperature distribution;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26320
Filename :
1486143
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1112410
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