• DocumentCode
    1112484
  • Title

    Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on

  • Author

    Kishino, Katsumi ; Harada, Akinori ; Kaneko, Yawara ; Kishino, Katsumi ; Harada, Atsushi ; Kaneko, Yuya

  • Author_Institution
    Department of Electrical and Electronics Engineering, Sophia University, Tokyo, Japan
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • fDate
    2/1/1987 12:00:00 AM
  • Firstpage
    180
  • Lastpage
    187
  • Abstract
    GaInAsP/AlGaAs lasers emitting at 0.67 μm in wavelength were fabricated on n-type
  • Keywords
    Visible lasers; Epitaxial growth; Fiber lasers; Gallium arsenide; Optical device fabrication; Optical fiber communication; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1987.1073313
  • Filename
    1073313