DocumentCode
1112484
Title
Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on
Author
Kishino, Katsumi ; Harada, Akinori ; Kaneko, Yawara ; Kishino, Katsumi ; Harada, Atsushi ; Kaneko, Yuya
Author_Institution
Department of Electrical and Electronics Engineering, Sophia University, Tokyo, Japan
Volume
23
Issue
2
fYear
1987
fDate
2/1/1987 12:00:00 AM
Firstpage
180
Lastpage
187
Abstract
GaInAsP/AlGaAs lasers emitting at 0.67 μm in wavelength were fabricated on n-type
Keywords
Visible lasers; Epitaxial growth; Fiber lasers; Gallium arsenide; Optical device fabrication; Optical fiber communication; Quantum well lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073313
Filename
1073313
Link To Document