DocumentCode :
1112530
Title :
A high threshold voltage uniformity MIS-like heterostructure FET using n+-Ge as a gate electrode
Author :
Arai, Kunihiro ; Mizutani, Takashi ; Yanagawa, Fumihiko
Author_Institution :
NTT Electrical Communications Laboratories, Kanagawa, Japan
Volume :
7
Issue :
3
fYear :
1986
fDate :
3/1/1986 12:00:00 AM
Firstpage :
158
Lastpage :
160
Abstract :
A new n+-Ge/ undoped-Alx Ga1-x As/ undoped-GaAs MISlike heterostructure FET (n+-Ge-HFET), using n+-Ge layer as a gate electrode material, is shown to have a high threshold voltage uniformity ( 
mV) over a large sample area of a 2-in wafer quadrant. This is thought to come from the FET structure, for which the threshold voltage is principally determined by the difference in the electron affinities of Ge and GaAs. The high VTH uniformity, as well as the positive FET characteristics ( 
mS/mm, 
V), makes n+-Ge-HFET very attractive for LSI application.
mV) over a large sample area of a 2-in wafer quadrant. This is thought to come from the FET structure, for which the threshold voltage is principally determined by the difference in the electron affinities of Ge and GaAs. The high V mS/mm, V), makes n+-Ge-HFET very attractive for LSI application.Keywords :
Electrodes; Electrons; FETs; Gallium arsenide; HEMTs; Impurities; Large scale integration; Reproducibility of results; Thickness control; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26330
Filename :
1486153
Link To Document :
