• DocumentCode
    1112530
  • Title

    A high threshold voltage uniformity MIS-like heterostructure FET using n+-Ge as a gate electrode

  • Author

    Arai, Kunihiro ; Mizutani, Takashi ; Yanagawa, Fumihiko

  • Author_Institution
    NTT Electrical Communications Laboratories, Kanagawa, Japan
  • Volume
    7
  • Issue
    3
  • fYear
    1986
  • fDate
    3/1/1986 12:00:00 AM
  • Firstpage
    158
  • Lastpage
    160
  • Abstract
    A new n+-Ge/ undoped-AlxGa1-xAs/ undoped-GaAs MISlike heterostructure FET (n+-Ge-HFET), using n+-Ge layer as a gate electrode material, is shown to have a high threshold voltage uniformity ( \\sigma V_{TH} = 11 mV) over a large sample area of a 2-in wafer quadrant. This is thought to come from the FET structure, for which the threshold voltage is principally determined by the difference in the electron affinities of Ge and GaAs. The high VTHuniformity, as well as the positive FET characteristics ( g_{m} = 170 mS/mm, V_{TH} = 0.25 V), makes n+-Ge-HFET very attractive for LSI application.
  • Keywords
    Electrodes; Electrons; FETs; Gallium arsenide; HEMTs; Impurities; Large scale integration; Reproducibility of results; Thickness control; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26330
  • Filename
    1486153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112530