Fabrication and optical-switching results of the double-gate static-induction thyristor with the first planar-gate and the second buried-gate structure

A new thyristor structure-a class of the double-gate (DG) static-induction (SI) thyristors-was fabricated and showed quick dual-gate current controllability and less turn-off tailing current, because the anode current can be controlled by both the first and the second gate and the electrons stored at the second gate can be discharged through the second gate circuit in a very short time at the turn-off process. Moreover, the DG SI thyristors have a capability of lower forward voltage drop and faster switching speed than those values of the single-gate SI thyristor.