Noise figure characteristics of 1/2-µm gate single-heterojunction high-electron-mobility FET´s at 35 GHz

In this letter, we report room-temperature noise figure performance of Gallium Arsenide single-heterojunction high-electron-mobility transistors (HEMT´s). We have measured a noise figure of 2 dB at 35 GHz with 5 dB of associated gain. The devices tested were 150 µm wide with 0.5-µm-long gates. The active layers were grown by molecular beam epitaxy (MBE). These values are the best reported results for either HEMT´s or MESFET´s at these frequencies, regardless of their geometry.