• DocumentCode
    1112708
  • Title

    Heterojunction bipolar transistors with ion-implanted bases

  • Author

    Tully, John W.

  • Author_Institution
    Northrop Research and Technology Center, Palos Verdes Peninsula, CA
  • Volume
    7
  • Issue
    4
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    203
  • Lastpage
    205
  • Abstract
    Heterojunction Bipolar Transistors (HBT´s) have been fabricated with Zn ion-implanted bases. These HBT´s were fabricated in the normal emitter-up configurations and had dc gains up to 100. This process should further the development of high-density IC´s fabricated with HBT´s.
  • Keywords
    Annealing; Etching; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Ion implantation; MOCVD; Metallization; Temperature; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26346
  • Filename
    1486169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112708