Title :
Heterojunction bipolar transistors with ion-implanted bases
Author_Institution :
Northrop Research and Technology Center, Palos Verdes Peninsula, CA
fDate :
4/1/1986 12:00:00 AM
Abstract :
Heterojunction Bipolar Transistors (HBT´s) have been fabricated with Zn ion-implanted bases. These HBT´s were fabricated in the normal emitter-up configurations and had dc gains up to 100. This process should further the development of high-density IC´s fabricated with HBT´s.
Keywords :
Annealing; Etching; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Ion implantation; MOCVD; Metallization; Temperature; Zinc;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26346
