MOSFET Characteristics in low-temperature plasma-enhanced chemical vapor deposited epitaxial silicon

The fabrication of high-quality MOSFET´s using low-temperature (750-800°C) Plasma-Enhanced Chemical Vapor Deposited (PECVD) epitaxial silicon is reported here for the first time. The fabricated devices include PMOS transistors with hole channel mobilities of 213 cm²/V.s (versus 218 cm²/V.s in bulk silicon controls) and NMOS transistors with electron channel mobilities of 520 cm²/V.s (versus 560 cm²/V.s in bulk silicon controls), and with an on-current to off-current ratio of 10⁷. These results indicate that epitaxial silicon films deposited by the PECVD technique are of high quality, even though the epitaxial deposition temperature was only 750-800°C.