• DocumentCode
    1112787
  • Title

    Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifier

  • Author

    Cheng, Julian ; Guth, G. ; Washington, M. ; Forrest, Stephen R. ; Wunder, R.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    7
  • Issue
    4
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    225
  • Lastpage
    228
  • Abstract
    Monolithic integrated In0.53Ga0.47As/InP dc-coupled amplifiers have been built using self-aligned gate junction field-effect transistors (JFET´s) grown by molecular beam epitaxy (MBE). The amplifier consists of a common-source inverter stage and a source-follower buffer with diode level shifters. Using a 1-µm gate length, amplifiers with a gain of 12 dB have been fabricated.
  • Keywords
    FETs; Helium; Indium phosphide; Inverters; Monolithic integrated circuits; Optical device fabrication; Schottky diodes; Substrates; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26353
  • Filename
    1486176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112787