A derivative method to determine a MOSFET´s effective channel length and width electrically

A new method is presented to determine the channel-width reduction ΔW and the channel-length reduction ΔL in CMOS transistors. By measuring the transconductance of certain sets of n-channel and p-channel MOSFET´s biased at low gate and drain voltages in the linear region, a set of derived first-order linear equations is used iteratively to solve for ΔW and ΔL. The results agree with the process observations of fabricated CMOS devices.