Title :
Low threshold ridge waveguide single quantum well laser processed by chemically assisted ion beam etching
Author :
Zhu, L.D. ; Feak, Glen A B ; Davis, Robert J. ; Ballantyne, Joseph M.
Author_Institution :
Cornell University, Ithaca, NY, USA
fDate :
3/1/1987 12:00:00 AM
Abstract :
Fundamental lateral mode ridge waveguide lasers have been developed utilizing chemically assisted ion beam etching. The lasers exhibited mean threshold currents of 12.6 mA with close to 100 percent yield and differential quantum efficiencies as high as 69 percent.
Keywords :
Gallium materials/lasers; Optical strip waveguides; Quantum-well laser; Chemical lasers; Chemical processes; Etching; Gallium arsenide; Ion beams; Laser modes; Optical device fabrication; Quantum well lasers; Threshold current; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1987.1073346
