DocumentCode
1112810
Title
Low threshold ridge waveguide single quantum well laser processed by chemically assisted ion beam etching
Author
Zhu, L.D. ; Feak, Glen A B ; Davis, Robert J. ; Ballantyne, Joseph M.
Author_Institution
Cornell University, Ithaca, NY, USA
Volume
23
Issue
3
fYear
1987
fDate
3/1/1987 12:00:00 AM
Firstpage
309
Lastpage
312
Abstract
Fundamental lateral mode ridge waveguide lasers have been developed utilizing chemically assisted ion beam etching. The lasers exhibited mean threshold currents of 12.6 mA with close to 100 percent yield and differential quantum efficiencies as high as 69 percent.
Keywords
Gallium materials/lasers; Optical strip waveguides; Quantum-well laser; Chemical lasers; Chemical processes; Etching; Gallium arsenide; Ion beams; Laser modes; Optical device fabrication; Quantum well lasers; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073346
Filename
1073346
Link To Document