Title :
Radiation-dependent hot-carrier effects
Author :
Reich, Robert K. ; Schrankler, Jay W. ; Ju, Dong-Hyuk ; Holt, M.S. ; Kirchner, Gary D.
Author_Institution :
Solid-State Electronics Division, Colorado Springs, CO
fDate :
4/1/1986 12:00:00 AM
Abstract :
The effect of ionizing radiation on hot-carrier degradation for n-channel MOSFET´s has been investigated. It has been experimentally found that hot-carrier degradation for these devices increases after exposure to ionizing radiation. Exposure can be deliberate or occur during device fabrication. The cause of the enhanced degradation has been attributed to radiation-induced trap states.
Keywords :
Acceleration; Annealing; Degradation; Hot carrier effects; Hot carriers; Interface states; Ionizing radiation; MOSFET circuits; Stress; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26356
