Low control voltage programming of floating gate MOSFETs and applications

Author

Thomsen, Axel ; Brooke, Martin A.

Author_Institution

Sch. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA

Volume

41

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

443

Lastpage

452

Abstract

Programming of EEPROM devices fabricated in standard processes often requires voltages that exceed the bulk-drain breakdown voltages of integrated circuits, making the full integration of the programming circuitry difficult. This paper presents a modified EEPROM device with two tunneling injectors that allows bidirectional, accurately controlled programming with voltages in the range of normal supply voltages. Additionally, two static voltages are required. This scheme allows full integration of the programming circuitry on chip. Applications in the areas of offset reduction for OPAMPs in clocked and continuous time systems as well as in neural network learning are presented

Keywords

EPROM; MOS integrated circuits; PLD programming; integrated memory circuits; EEPROM devices; bulk-drain breakdown voltages; clocked systems; continuous time systems; control voltage; floating gate MOSFETs; neural network learning; offset reduction; programming; programming circuitry; static voltages; tunneling injectors; Breakdown voltage; Circuits; Clocks; Continuous time systems; EPROM; Low voltage; MOSFETs; Neural networks; Tunneling; Voltage control;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.295240

Filename

295240