Title :
Monolithic integration of Si MOSFET´s and GaAs MESFET´s
Author :
Choi, Hong K. ; Turner, Geroge W. ; Tsaur, Bor-Yeu
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
fDate :
4/1/1986 12:00:00 AM
Abstract :
Integration of Si MOSFET´s and GaAs MESFET´s on a monolithic GaAs/Si (MGS) substrate has been demonstrated. The GaAs MESFET´s have transconductance of 150 mS/mm for a gate length of 1 µm, and the Si MOSFET´s have transconductance of 19 mS/mm for a gate length of 5 µm and an oxide thickness of 800 Å. These characteristics are comparable to those for devices fabricated on separate GaAs and Si substrates.
Keywords :
Chemical vapor deposition; Gallium arsenide; Lattices; MESFETs; Molecular beam epitaxial growth; Monolithic integrated circuits; Signal processing; Substrates; Transconductance; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26358
