DocumentCode :
1112871
Title :
Electron tunneling in GaAs/AlGaAs heterostructures
Author :
Marsh, A. ; Marsh, A.C.
Author_Institution :
Univ. of Cambridge, Cambridge, UK
Volume :
23
Issue :
4
fYear :
1987
fDate :
4/1/1987 12:00:00 AM
Firstpage :
371
Lastpage :
376
Abstract :
Electron transport through thin
Keywords :
Tunnel devices/effects; Boundary conditions; Chirp; Effective mass; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Quantum mechanics; Semiconductor diodes; Tunneling;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073352
Filename :
1073352
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1112871
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