• DocumentCode
    1112907
  • Title

    Planar InP/InGaAs avalanche photodiodes with preferential lateral extended guard ring

  • Author

    Taguchi, Kenko ; Torikai, T. ; Sugimoto, Yoshimasa ; Makita, Kikuo ; Ishihara, Hisahiro ; Fujita, Sadao ; Minemura, Kouichi

  • Author_Institution
    NEC Corporation, Ibaraki, Japan
  • Volume
    7
  • Issue
    4
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    257
  • Lastpage
    258
  • Abstract
    High-speed and high-sensitivity planar InP/InGaAs avalanche photodiodes (APD´s) have been fabricated with a newly developed preferential lateral extended guard ring (PLEG). By employing the configuration, avalanche photodiode yield was markedly improved without edge breakdown. Received powers required to give 10-9bit-error rate (BER) at 1.55-1.57-µm wavelength were -44.5 and -37.4 dBm for 450 Mbit/s and 2 Gbit/s, respectively.
  • Keywords
    Acceleration; Avalanche photodiodes; Bit error rate; Breakdown voltage; Diodes; Electric breakdown; Histograms; Indium gallium arsenide; Indium phosphide; Monitoring;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26364
  • Filename
    1486187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112907