• DocumentCode
    1112930
  • Title

    Calculation of base-collector efficiency for hot-electron devices

  • Author

    Vakhshoori, Daryoosh ; Wang, Shyh

  • Author_Institution
    University of California, Berkeley, CA
  • Volume
    7
  • Issue
    4
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    262
  • Lastpage
    264
  • Abstract
    In this paper a new accurate analysis of base-collector efficiency of hot-electron devices will be presented. This analysis is crucial to the estimation of gain of semiconductor-metal-semiconductor (SMS) amplifiers of BHETA family [1], induced base transistors (IBT) [2], two-dimensional electron gas base amplifier transistor family (TEG-BAT) [3], and other similar structures. The analysis in this paper provides more direct functional dependencies of base-collector efficiency on biasing, dimensions, and other parameters of these kind of devices.
  • Keywords
    Electron mobility; Laboratories; Lattices; Operational amplifiers; Optical scattering; Particle scattering; Phonons; Predictive models; Satellites; Semiconductor optical amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26366
  • Filename
    1486189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1112930