DocumentCode
1112977
Title
Frequency offset locking of AlGaAs semiconductor lasers
Author
Kuboki, Katsuhiko ; Ohtsu, Motoichi
Author_Institution
Tokyo Institute of Technology, Kanagawa, Japan
Volume
23
Issue
4
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
388
Lastpage
394
Abstract
Frequency offset locking was proposed as a reliable electrical negative feedback technique for tracking and sweeping of a semiconductor laser frequency. A frequency stabilized laser was used as a master laser, whose residual frequency fluctuations were 140 (kHz) at the integration time (τ) of 100 ms
s. A digital phase comparator of a large dynamic range of
(rad) was employed in the feedback loop to reduce the phase fluctuations of the beat signal between the master and slave lasers. Performances of frequency tracking and sweeping of the slave laser were quantitatively evaluated, and the results are: residual frequency fluctuations of the beat signal were reduced as low as 11 (Hz) at
s, which meant that the residual frequency fluctuations of the slave laser were almost equal to those of the master laser, i.e., the slave laser frequency tracked accurately to the master laser frequency. Both the capture range and lock range of the beat frequency were 1.22 GHz. Frequency tunable range of the slave laser was 36.6 GHz under the condition of frequency offset locking, in which the slave laser frequency fluctuations were maintained as low as the one given above.
s. A digital phase comparator of a large dynamic range of
(rad) was employed in the feedback loop to reduce the phase fluctuations of the beat signal between the master and slave lasers. Performances of frequency tracking and sweeping of the slave laser were quantitatively evaluated, and the results are: residual frequency fluctuations of the beat signal were reduced as low as 11 (Hz) at
s, which meant that the residual frequency fluctuations of the slave laser were almost equal to those of the master laser, i.e., the slave laser frequency tracked accurately to the master laser frequency. Both the capture range and lock range of the beat frequency were 1.22 GHz. Frequency tunable range of the slave laser was 36.6 GHz under the condition of frequency offset locking, in which the slave laser frequency fluctuations were maintained as low as the one given above.Keywords
Gallium materials/lasers; Laser tuning; Dynamic range; Feedback loop; Fluctuations; Frequency; Laser feedback; Laser stability; Master-slave; Negative feedback; Semiconductor device reliability; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073362
Filename
1073362
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