• DocumentCode
    1113019
  • Title

    Limited reaction processing: In-situ metal—oxide—semiconductor capacitors

  • Author

    Stur, J.C. ; Gronet, C.M. ; Gibbons, J.F.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    7
  • Issue
    5
  • fYear
    1986
  • fDate
    5/1/1986 12:00:00 AM
  • Firstpage
    282
  • Lastpage
    284
  • Abstract
    Limited reaction processing (LRP) has been used to fabricate in-situ silicon-silicon dioxide-polycrystalline silicon layers for metal-oxide-semiconductor (MOS) capacitors. The process consists of multiple in-situ rapid thermal processing steps to grow or deposit different layers. Capacitors have been fabricated from these layers and analyzed by capacitance-voltage measurements for interfacial fixed charge and interface state density. The capacitors exhibit excellent characteristics.
  • Keywords
    Fabrication; Gases; Inductors; Insulation; MOS capacitors; Nonhomogeneous media; Oxidation; Rapid thermal processing; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26374
  • Filename
    1486197
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1113019