Title :
InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax>268 GHz
Author :
Griffith, Zach ; Kim, Youngmin ; Dahlström, Mattias ; Gossard, Arthur C. ; Rodwell, Mark J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
InP-In0.53Ga0.47As-InP double heterojunction bipolar transistors (DHBTs) were grown on a GaAs substrate using a metamorphic buffer layer and then fabricated. The metamorphic buffer layer is InP - employed because of its high thermal conductivity to minimize device heating. An fτ and fmax of 268 and 339 GHz were measured, respectively - both records for metamorphic DHBTs. A 70-nm SiO2 dielectric sidewall was deposited on the emitter contact to permit a longer InP emitter wet etch for increased device yield and reduced base leakage current. The dc current gain β is ≈35 and VBR,CEO=5.7 V. The collector leakage current Icbo is 90 pA at Vcb=0.3 V. These values of fτ, fmax, Icbo, and β are consistent with InP based DHBTs of the same layer structure grown on a lattice-matched InP substrate.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; millimetre wave bipolar transistors; semiconductor growth; 0.3 V; 268 GHz; 339 GHz; 5.7 V; 90 pA; DC current gain; DHBT; GaAs; InGaAs-InP-GaAs; InP-In0.53Ga0.47As-InP; SiO; base leakage current; collector leakage current; device heating minimization; dielectric sidewall; double heterojunction bipolar transistors; lattice-matched device performance; metamorphic buffer layer; metamorphic growth; thermal conductivity; Buffer layers; Dielectric devices; Dielectric measurements; Double heterojunction bipolar transistors; Gallium arsenide; Heating; Indium phosphide; Leakage current; Thermal conductivity; Wet etching; HBT; Heterojunction bipolar transistor; lattice matched; metamorphic growth;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.835160
